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名稱：高純TiSe2粉末
晶體種類： 半金屬，紅外材料，超導(dǎo)材料
純度： >99.999 %
表征方法： EDS，SEM，Raman
bandgap： 0 eV
注意事項(xiàng)： 表面容易氧化

晶體大小：5~10 mm
純度：>99.999 %
表征方法：EDS，SEM，Raman
晶體生長方式：CVT 化學(xué)氣相傳輸法

高純TiSe2粉末價(jià)格：1800元/克
5*5mm高純TiSe2晶體價(jià)格：2000元/塊
 

參考文獻(xiàn)

1,Wang, Hong, et al. "Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2." Advanced Materials 30.8 (2018): 1704382.

2, Hellgren, Maria, et al. "Critical role of the exchange interaction for the electronic structure and charge-density-wave formation in TiSe 2." Physical review letters 119.17 (2017): 176401.

3,Singh, Bahadur, et al. "Stable charge density wave phase in a 1 T–TiSe 2 monolayer." Physical Review B 95.24 (2017): 245136.

4,Campbell, Daniel J., et al. "Intrinsic insulating ground state in transition metal dichalcogenide TiSe 2." Physical Review Materials 3.5 (2019): 053402.

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